The Channel-width Dependence of the Low-temperature Hole Mobility in Ge-rich Narrow Square Quantum Well Studied by the Band-bending Method

Tran Thi Hai, Nguyen Trung Hong, Nguyen Huyen Tung, Doan Nhat Quang


We employ the theory of band-bending effects to explain the channel-width dependence of the mobility of a two-dimentional hole gas (2DHG) in narrow square Si/Si\(_{1-x}\)Ge\(_x\)/Si quantum well at high Ge content. The numerical calculation of scattering mechanisms is shown in comparison with the ones from the previous computations. Our method enables a better quantitative description of recently measured data about the dependence of the 8 K mobility of holes in a Si/Si\(_{0.2}\)Ge\(_{0.8}\)/Si quantum well on the channel width varying from 25 - 70Å

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