TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF POROUS GAP

Thuy Thi Pham

Abstract


This paper reports on the temperature-dependent photoluminescence of porous GaP under the 532-nm excitation. Porous GaP formed by electrochemical anodization of (111)-oriented bulk material exhibits green emission at 550 nm (2.25 eV) and red emission at 770 nm (1.65 eV) at room temperature. In the temperature range from 25 K to 275 K intensity from the green emission gradually decreases when the temperature increases. Additionally, peak position of the green luminescence band shifts to lower energy with increasing temperature and the same the GaP band gap narrowing with temperature. This means a contribution of lattice vibrations.

Keywords


porous GaP, temperature-dependent photoluminescence

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References


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DOI: https://doi.org/10.15625/2525-2518/57/3A/14057 Display counter: Abstract : 106 views. PDF : 71 views.

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